Method of making semiconductor photodetector with reduced time-c

Details Method of making semiconductor photodetector with reduced time-c Method of making semiconductor photodetector with reduced time-c

1978-10-31

1981-09-22

Powell, William A.

Coating processes

Electrical product produced

Condenser or capacitor

29572, 156655, 1566591, 156662, 156667, 357 30, 357 55, 430313, 430317, 427 431, 427 77, B05D 512, H01L 2714, H01L 3100

Patent

active

042910684

ABSTRACT:
An insulating layer on the surface of a slab of photo-responsive semicondor material is treated to produce a pattern of projections or mesas. The treatment includes the steps of producing a mask on the insulating layer using electron-beam lithography, etching holes in the layer through the mask, stripping the mask, and finishing with the usual electrical conductors on the insulating layer. An alternate embodiment etches the surface of the slab to produce a scrabrous surface, then coats with aluminum oxide and electrical conductors.

REFERENCES:
patent: 3419746 (1968-12-01), Crowell et al.
patent: 3523208 (1970-08-01), Bodmer et al.
patent: 3605037 (1971-09-01), D'Asaro
patent: 3725743 (1973-04-01), Murayama
patent: 3864720 (1975-02-01), Merrin
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4131488 (1979-12-01), Lesk et al.
patent: 4135290 (1979-01-01), Evans

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