Method of making semiconductor photo-electrically-sensitive devi

Details Method of making semiconductor photo-electrically-sensitive devi Method of making semiconductor photo-electrically-sensitive devi

1987-05-05

1988-07-19

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136258, 427 74, 437101, H01L 3118

Patent

active

047585277

ABSTRACT:
A manufacturing method for semiconductor photo-electrically-sensitive devices. On a conductive substrate or a first conductive layer formed on the substrate a non-single-crystal semiconductor layer member is formed in a reaction chamber, the non-single-crystal semiconductor layer member having at least one I-type non-single-crystal semiconductor layer, whereupon a second conductive layer is formed upon the non-single-crystal semiconductor layer member. The I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium and oxygen in very low concentrations.

REFERENCES:
patent: 4510344 (1985-04-01), Berman
patent: 4667214 (1987-05-01), Sekimura et al.

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