Method of making semiconductor-on-insulator structure

Details Method of making semiconductor-on-insulator structure Method of making semiconductor-on-insulator structure

1993-10-06

1995-09-26

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 62, 437105, 437107, 437126, 437132, H01L 2120

Patent

active

054533996

ABSTRACT:
In one form of the invention, a method is disclosed for fabricating a semiconductor-on-insulator structure comprising the steps of: forming an insulator layer 22; forming a layer 24 comprising boron (B) on the insulator layer 22; and forming a semiconductor layer 26 on the layer 24 comprising B.

REFERENCES:
Asano et al. in "Heteroepitaxial Si,Ge, and GaAs on insulator structures on Si substrates by use of fluoride insulators" Materials Research Society Symposium Proceedings vol. 91, (1987), pp. 337 348.

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