Method of making semiconductor MOSFET device by bombarding with

Details Method of making semiconductor MOSFET device by bombarding with Method of making semiconductor MOSFET device by bombarding with

1981-12-01

1984-09-04

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29571, 148187, 357 91, H01L 21263, H01L 2126

Patent

active

044695276

ABSTRACT:
A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then rendering only the surface of the thus irradiated substrate semiconductive, so that a semiconductor device is produced by using the substrate thus formed.

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Maenpaa et al., Thin Solid Films, 67, (1980), 293.
Fowler et al., IBM-TDB, 24, (1981), 1090.

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