Method of making semiconductor memory device

Details Method of making semiconductor memory device Method of making semiconductor memory device

1982-01-22

1985-11-26

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29571, 148 15, 148187, 148DIG82, 357 236, 357 91, H01L 2128, H01L 2126

Patent

active

045547297

ABSTRACT:
Herein disclosed is a semiconductor memory device which is composed of a peripheral circuit unit equipped with a gate protection circuit having a protection resistor and a memory cell unit so that it can be used as an MISFET type static RAM and which is characterized in that the protection resistor is made of a polycrystalline silicon film having substantially the same resistivity as that of an overlying polycrystalline silicon film formed to merge into the load resistor of the memory cell unit.

REFERENCES:
patent: 4167804 (1979-09-01), Greensten
patent: 4240097 (1980-12-01), Raymond, Jr.
patent: 4246593 (1981-01-01), Bartlett
patent: 4317274 (1982-03-01), Yasunari
patent: 4370798 (1983-02-01), Lien et al.
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4408385 (1983-10-01), Rao et al.
patent: 4475964 (1984-10-01), Arizumi et al.

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