Method of making semiconductor memory device

Details Method of making semiconductor memory device Method of making semiconductor memory device

1992-11-13

1994-08-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437229, 437919, H01L 2170

Patent

active

053366301

ABSTRACT:
A method of making a semiconductor memory device wherein a storage node having a plurality of pillars, capable of increasing the storage node surface area and thus the cell capacitance. The storage node is formed by depositing a storage node polysilicon film to have a thickness of 5,000 .ANG. to 6,000 .ANG. over a semiconductor substrate, forming a photoresist pattern over the polysilicon film in a direct electron beam writing manner, and etching the polysilicon film up to a depth of 1,000 .ANG. from the upper surfaces of a gate and a bit line by using the photoresist pattern. The formed storage node has a plurality of uniformly spaced pillars. Alternatively, the storage node is formed by forming a smoothing insulating film over the semiconductor substrate depositing a storage node polysilicon film over the smoothing insulating film, primarily photo exposing the semiconductor substrate using a glass mask having phase shifters, secondarily photo exposing the semiconductor substrate under the condition of rotating 90.degree. the semiconductor substrate, to form a check-board photoresist pattern, and patterning the polysilicon film using the photoresist pattern as a mask. The formed storage node has a plurality of pillars arranged independently or intersectionally.

REFERENCES:
patent: 5213992 (1993-05-01), Lu
Jinbo et al. "0.2 .mu.m Or Less i-Line Lithography Phase-Shifting Mask Technology" IEDM 90 pp. 825-828.

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