Method of making semiconductor laser with inverted mesa shaped r

Details Method of making semiconductor laser with inverted mesa shaped r Method of making semiconductor laser with inverted mesa shaped r

1998-01-21

1999-10-05

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 39, 438 41, H01L 2120

Patent

active

059637862

ABSTRACT:
A semiconductor laser has a first conduction type clad layer, an active layer and a second conduction type clad layer formed on a first conduction type semiconductor substrate in this order. An inverted mesa-shaped ridge is formed on a part of the second conduction type clad layer and a first conduction type current stopping layer is formed on each side of the ridge. Each side of the inverted mesa-shaped ridge is curved into a concave surface in a plane perpendicular to the longitudinal direction of the ridge.

REFERENCES:
patent: 4496403 (1985-01-01), Turley

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