Method of making semiconductor laser

Details Method of making semiconductor laser Method of making semiconductor laser

1995-09-01

1998-06-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 31, 438 32, 438 40, 438 47, H01L 2100

Patent

active

057632910

ABSTRACT:
A method of fabricating a semiconductor laser producing visible light includes forming a double heterojunction (DH) structure on a GaAs substrate including an n type GaAs buffer layer, an n type AlGaInP cladding layer, an Al.sub.x Ga.sub.(1-x) InP active layer, a first p type AlGaInP cladding layer, a p type GaInP etch stopping layer, a second p type AlGaInP cladding layer, and a p type GaAs cap layer. A stripe-shaped mask is formed on the DH structure, the p type GaAs cap layer is selectively etched using the mask, and the second p type AlGaInP cladding layer is selectively etched to the p type GaInP etch stopping layer to form a stripe-shaped ridge. Therefore, a high precision ridge can be formed easily.

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