Method of making semiconductor laser

Details Method of making semiconductor laser Method of making semiconductor laser

1994-10-17

1996-12-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

148DIG95, H01L 2120

Patent

active

055853099

ABSTRACT:
A method for fabricating a semiconductor laser includes forming a double heterojunction structure on a first conductivity type semiconductor substrate; forming the double heterojunction structure into a stripe mesa shape by selective etching; successively growing a first conductivity type layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer on opposite sides of the mesa to embed the mesa; and adding an impurity from a surface of the first conductivity type current blocking layer to form impurity doped regions that electrically separate the second conductivity type current blocking layer from an upper part of the mesa at opposite sides of the mesa.

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patent: 4799227 (1989-01-01), Kaneiwa et al.
patent: 4972238 (1990-11-01), Tanaka
patent: 4984244 (1991-01-01), Yamamoto et al.

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