Method of making semiconductor integrated circuits having backsi

Details Method of making semiconductor integrated circuits having backsi Method of making semiconductor integrated circuits having backsi

1984-08-21

1986-05-20

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29578, 29591, 148175, 148187, 148DIG60, 148DIG61, H01L 750, H01L 21324

Patent

active

045899282

ABSTRACT:
For achieving dense packing of MOS transistors at the top surface of a silicon semiconductor body, second level metallization including arsenic doped polysilicon contacts are used in conjunction with a phosphorus gettering step at a time when the top surface is sealed against the introduction of phosphorus by an undoped sacrificial glass layer, i.e., which is essentially free of phosphorus. The second level metallization is thereafter completed by coating the polysilicon with a high conductivity metal, such as aluminum. During the gettering, the polysilicon contacts are insulated from the first level metallization by a planarized glass layer doped with phosphorus to a concentration below the saturation level of phosphorus in the glass.

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