Method of making semiconductor integrated circuit device having

Details Method of making semiconductor integrated circuit device having Method of making semiconductor integrated circuit device having

1994-01-11

1995-04-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 44, 437 48, H01L 2170

Patent

active

054078539

ABSTRACT:
A semiconductor integrated device having a non-volatile memory element or memory cell of a single-element type in a non-volatile memory circuit employing a field effect transistor which has, in addition to a floating gate electrode for storage of information and a controlling gate electrode, a source which includes a heavily doped region having a depth into the semiconductor substrate extending from the major surface thereof which is large. The single-element type field effect transistor, furthermore, has a drain which includes a lightly doped region which has a depth extending into the semiconductor substrate from the major surface thereof which is small.

REFERENCES:
patent: 4376947 (1983-03-01), Chiu et al.
patent: 4665418 (1987-05-01), Mizutani
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4784966 (1988-11-01), Chen
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4835740 (1989-05-01), Sato
patent: 4859619 (1989-08-01), Wu et al.
patent: 4972371 (1990-11-01), Komori et al.
patent: 5079603 (1992-01-01), Komori et al.
patent: 5153144 (1992-10-01), Komori et al.
patent: 5340760 (1994-08-01), Komori et al.
"A Single Transistor EEPROM Cell and Its Implementation in a 512K CMOS EEPROM", 1985 IEDM Tech. Dig., pp. 616-619, by S. Mukherjee, et al.
IEEE Sponsored IEDM87 publication article entitled "A Flash-Erase EEPROM Cell with an Asymmetric Source and Drain Structure", by H. Kume, et al., IEDM 1987, 25.8, pp. 560-563.

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