Method of making semiconductor integrated-circuit capacitor

Details Method of making semiconductor integrated-circuit capacitor Method of making semiconductor integrated-circuit capacitor

1995-04-12

1997-06-24

Tsai, Jey

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, H01L 2170, H01L 2700

Patent

active

056417020

ABSTRACT:
A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.

REFERENCES:
patent: 3850764 (1974-11-01), Herczog et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5374578 (1994-12-01), Patel et al.

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