Method of making semiconductor integrated circuit

Details Method of making semiconductor integrated circuit Method of making semiconductor integrated circuit

1981-10-07

1983-10-18

Andrews, M. J.

Metal working

Method of mechanical manufacture

Assembling or joining

29576R, 29577R, H01L 2122, H01L 21306, H01L 2976

Patent

active

044097255

ABSTRACT:
A method of making a semiconductor integrated circuit on a semiconductor substrate containing thereon an SIT and an IG(MOS) FET or an SIT and C-MOS FETs, comprises a series of steps of making these functional semiconductor devices many of which steps are rendered to be common to the SIT and the FET. The gate region of said IG(MOS) FET is formed as a semiconductor gate layer which typically is made of polycrystalline silicon, and an active semiconductor area of said IG(MOS) FET is formed by using this semiconductor gate layer as the mask therefor.

REFERENCES:
patent: 4046605 (1977-09-01), Nelson et al.
patent: 4049476 (1977-09-01), Horie
patent: 4325180 (1982-04-01), Curran

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