Method of making semiconductor film

Details Method of making semiconductor film Method of making semiconductor film

1986-08-22

1987-06-02

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, B05D 306

Patent

active

046702938

ABSTRACT:
A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, and performing a discharge in the presence of said reacrion gas for producing said semiconductor film, while arranging said non-flat surface of said substrate outside a plasma region formed between said discharge electrodes and further locating said non-flat surface substantially in a vertical direction with respect to electrode surfaces of said discharge electrodes, thereby semiconductor film being directly and uniformly deposited on said non-flat surface of said substrate, which is of worth in the production of, e.g., roofing tile-shaped photovoltaic devices.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4252837 (1981-02-01), Auton
patent: 4452828 (1984-06-01), Namba et al.
patent: 4461783 (1984-07-01), Yamazaki
patent: 4473597 (1984-09-01), Pankove
patent: 4515107 (1985-05-01), Fournier et al.
patent: 4569719 (1986-02-01), Coleman

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