Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1973-12-06
1979-12-25
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29578, 29580, 148187, 156647, 156649, 156657, 156662, 357 15, 357 49, 357 55, 357 65, 357 68, 357 69, H01L 21306, H01L 2176
Patent
active
041804228
ABSTRACT:
A method of making a number of semiconductor diodes on a single wafer without breakage during handling and processing, comprising the steps of forming a plurality of mesas on one surface of an intrinsic substrate, diffusing a selected first conductivity-type region into each mesa, coating the front surface of the substrate and mesas with oxide, chemically milling recesses into the opposite side of the substrate in alignment with the mesas to a predetermined depth where the mesas are each supported by a thin annular area of substrate material permitting transfer of the device into an epitaxial reactor, gas etching the recesses to a depth beyond the oxide interface to physically separate the mesas from the substrate material, growing a thin epitaxial layer of opposite conductivity type over the back surface of the device, applying ohmic contacts to the device, and separating the individual mesas.
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Pannone Joseph D.
Raytheon Company
Rutledge L. Dewayne
Saba W. G.
Sharkansky Richard M.
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