Method of making semiconductor devices having two-layer gate str

Details Method of making semiconductor devices having two-layer gate str Method of making semiconductor devices having two-layer gate str

1992-05-26

1995-02-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437913, 257213, H01L 21265

Patent

active

053936833

ABSTRACT:
The present invention includes a method of forming semiconductor oxide layers and, in particular, gate oxide layers, in MOS semiconductor devices formed on silicon substrates. The method includes the steps of forming a first silicon oxide sublayer on the silicon substrate in an atmosphere including primarily oxygen, and forming a second silicon oxide sublayer over the first sublayer in an atmosphere including primarily nitrous oxide (N.sub.2 O). Preferably, the first and second sublayers represent 80 percent and 20 percent, respectively, of the silicon oxide layer.

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Hwang et al., "Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N.sub.2 O." Appl. Phys. Lett., vol. 57, No. 10, 1010-1011 (Sep. 1990).
Ahn et al., "High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N.sub.2 O." J. Electrochem. Soc., vol. 138, No. 9, 39-41 (Sep. 1991).

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