Method of making semiconductor devices having protruding contact

Details Method of making semiconductor devices having protruding contact Method of making semiconductor devices having protruding contact

1999-03-23

2000-08-22

Bowers, Jr., Charles

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

438107, 438118, H01L 2144, H01L 2150

Patent

active

06107120&

ABSTRACT:
A method of making semiconductor devices with contacts protruding from openings in a passivation layer over an active chip area. Inside each opening, a relatively hard barrier layer is provided and a flash-plated film is applied to subsequently form a relatively soft diffusion barrier layer when a protruding contact is formed. Two semiconductor devices with electrodes are joined by embedding relatively hard electrodes of a first device into relatively soft electrodes of a second device. A reducing agent can be incorporated into an insulating resin applied between semiconductor chips at areas other than the bonded electrodes.

REFERENCES:
patent: 5128746 (1992-07-01), Pennisi et al.
patent: 5289631 (1994-03-01), Koopman et al.
patent: 5471092 (1995-11-01), Chan et al.
patent: 5634268 (1997-06-01), Dalal et al.
patent: 5665996 (1997-09-01), Williams et al.
R. Aschenbrenner et al., "Electroless Nickel/Copper Plating as a New Bump Metallization", May 1995, IEEE Transactions on Components, Packaging, and Manufacturing Technology--Part B, vol. 18, No. 2, pp. 334-338.
Patent Abstracts of Japan, vol. 006, No. 160 (E-126), Aug. 21, 1982, & JP 57 079649 A (Seiko Epson Corp), May 18, 1982, *abstract*.
Proceedings of the Electronic Components and Technology Conference, Orlando, Jun. 1-4, 1993, No. Conf. 43, Jun. 1, 1993, Institute of Electrical and Electronics Engineers, pp. 579-583, XP000380056 Howell W J et al: "Area Array Interconnection with CU-PI Thin Films on a Multi-Layer Glass-Ceramic Substrate"* p. 581, righ-hand column, last paragraph--p. 582, left-hand column, last paragraph; figure 8*.
Research Disclosure, No. 330, Oct. 1, 1991, p. 778 XP000265038 "Chip Pad Process" * the whole document *.
Patent Abstracts of Japan; vol. 096, No. 010, Oct. 31, 1996 & JP 08 148495 A (Fujitsu Ltd), Jun. 7, 1996 *abstract*.
Patent Abstracts of Japan;, vol. 095, No. 008, Sep. 29, 1995 & JP 07 122591 A (Nippondenso Co Ltd), May 12, 1995 *abstract*.
"Encapsulated Solder Joint for Chip Mounting"; IBM Technical Disclosure Bulletin; vol. 32, No. 108, Mar. 1, 1990, p. 480 XP000097966; *the whole document*.
Patent Abstracts of Japan; vol. 095, No. 006; Jul. 31, 1995 & JP 07 078848 (A Nippondenso Co Ltd); Mar. 20, 1995, *abstract*.
Patent Abstracts of Japan; vol. 012, No. 414, (E-677); Nov. 2, 1998 & JP 63 152136 A (Fuji Electric Co Ltd); Jun. 24, 1988; *abstract*.
Patent Abstracts of Japan; vol. 008, No. 200 (E-266), Sep. 13, 1984, & JP 59 088861 A (Matsushita Denki Sangyo KK); May 22, 1984; *abstract*.

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