Method of making semiconductor devices having protruding contact

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

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438107, 438118, H01L 2144, H01L 2150

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06107120&

ABSTRACT:
A method of making semiconductor devices with contacts protruding from openings in a passivation layer over an active chip area. Inside each opening, a relatively hard barrier layer is provided and a flash-plated film is applied to subsequently form a relatively soft diffusion barrier layer when a protruding contact is formed. Two semiconductor devices with electrodes are joined by embedding relatively hard electrodes of a first device into relatively soft electrodes of a second device. A reducing agent can be incorporated into an insulating resin applied between semiconductor chips at areas other than the bonded electrodes.

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