Method of making semiconductor devices having dielectric isolati

Details Method of making semiconductor devices having dielectric isolati Method of making semiconductor devices having dielectric isolati

1984-08-15

1986-06-24

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29578, 29571, 29591, 148 15, 357 55, 357 40, 156643, 156648, 156649, 1566591, H01L 2176

Patent

active

045960712

ABSTRACT:
A method of making semiconductor devices having fine dielectric element isolation regions is disclosed. The method comprises the steps of preparing a semiconductor substrate of one conductivity type which is in a high impurity concentration; forming on the surface of the semi-conductor substrate an epitaxial layer having the same conductivity type as that of the semiconductor substrate in a low impurity concentration; etching off selected regions of the epitaxial layer so as to form islands of the epitaxial layer; forming a CVD oxide layer all over the surface of the structure obtained by the steps; applying high-molecular material film all over the surface of the oxide layer; and removing both the oxide layer and the high-molecular material film so as to expose the surface of the islands, whereby fine element isolation regions of the oxide layer are obtained between the islands.

REFERENCES:
patent: 4101350 (1978-07-01), Possley et al.
patent: 4307180 (1981-12-01), Pogge
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4505025 (1985-03-01), Kurosawa et al.
Solid-State Science and Technology "A Method for Area Saving Planar Isolation Oxides Using Oxidation Protected Sidewalls" Nov. 1980.

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