Method of making semiconductor devices by forming an impurity ad

Details Method of making semiconductor devices by forming an impurity ad Method of making semiconductor devices by forming an impurity ad

1984-07-02

1985-08-20

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 148175, 148187, 357 231, 357 91, H01L 2120, H01L 21225

Patent

active

045355290

ABSTRACT:
A method of manufacturing a semiconductor device is provided in which semiconductor circuit elements are provided in regions formed by diffusion from one or more buried layers into an epitaxial layer. The diffusion is carried out such that a surface layer having substantially the same doping as the original epitaxial layer is left above the diffused into epitaxial layer above the buried layer. The surface layer serves as a reference doping for insulated gate field effect transistors to be formed. This is of a particular importance for threshold voltage determinations in CMOS circuits having adjoining "twin tub" regions diffused from buried layers of opposite conductivity types.

REFERENCES:
patent: 4128439 (1978-12-01), Jambotkar
patent: 4132573 (1979-01-01), Kraft
patent: 4168997 (1979-09-01), Compton
patent: 4420344 (1983-12-01), Davies et al.
patent: 4420872 (1983-12-01), Zaldivar
patent: 4442591 (1984-04-01), Haken
patent: 4443933 (1984-04-01), De Brebisson
patent: 4466171 (1984-08-01), Jochems

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