Method of making semiconductor devices

Details Method of making semiconductor devices Method of making semiconductor devices

2005-12-15

2008-03-25

Lebentritt, Michael (Department: 2812)

Pipes and tubular conduits

Repairing

C257SE21375

Reexamination Certificate

active

07347228

ABSTRACT:
A method for fabricating semiconductor device is provided. A high stress layer formed on, under or on both sides of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress of the region is changed by ion implanting. Therefore, compressive stress and tensile stress occur on the high stress layer. According the disclosed method, the high stress layer may simultaneously improve the characteristics of the transistors formed on the same wafer. Further, the mobility of the carriers of the device is enhanced.

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“Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”, A. Shimizu et al.; Hitachi ULSI Systems, Co., Ltd.; IEEE 2001; pp. 19.4.1-19.4.4.

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