Method of making semiconductor devices

Details Method of making semiconductor devices Method of making semiconductor devices

1979-07-18

1983-04-05

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29578, 29591, 29576B, 148187, 357 59, 357 91, H01L 21263, H01L 2120, H01L 2122

Patent

active

043790011

ABSTRACT:
In a semiconductor device such as a bipolar transistor and a field effect transistor of the type having a substrate, a doped polycrystalline silicon region selectively formed on the substrate and an insulating film overlying the polycrystalline silicon region, the region is shaped as mesa having side surfaces with a negative coefficient of gradient between the substrate and the top of the mesa.

REFERENCES:
patent: 4074300 (1978-02-01), Sakai
patent: 4074304 (1978-02-01), Shiba
patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4148054 (1979-04-01), Hart et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4162506 (1979-07-01), Takei
patent: 4188707 (1980-02-01), Asano et al.
patent: 4234357 (1980-11-01), Schepple
patent: 4240845 (1980-12-01), Esch et al.
patent: 4274891 (1981-06-01), Silvestri et al.
patent: 4290185 (1981-09-01), McKenny et al.
patent: 4296426 (1981-10-01), Giles
patent: 4306915 (1981-12-01), Shiba
patent: 4313255 (1982-02-01), Shinozaki et al.
Jinno et al., J. Electrochem. Soc., 125 (May, 1978) 827.

Affiliated with

Also associated with

Rating

Method of making semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-564500