Method of making semiconductor devices

Details Method of making semiconductor devices Method of making semiconductor devices

1991-04-05

1992-12-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437184, 156656, H01L 2970

Patent

active

051680718

ABSTRACT:
Disclosed is a method of making semiconductor devices that comprises etching of a semiconductor layer, with a patterned metal layer acting as the etch mask. The patterned metal layer comprises a mask metal layer (exemplarily Ti) overlying a contact metal layer (exemplarily a Au-containing layer). In an exemplary embodiment the inventive method is used to manufacture InP-based heterojunction bipolar transistors.

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"Physics and High Speed Devices", by A. F. J. Levi et al, Proceedings of the 2nd International Conference on InP and Related Materials, Denver, Colo., Apr. 1990, pp. 6-12.

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