Method of making semiconductor device with self-aligned insulato

Details Method of making semiconductor device with self-aligned insulato Method of making semiconductor device with self-aligned insulato

1996-01-24

1998-01-27

Niebling, John

Fishing, trapping, and vermin destroying

437 34, 437 41, H01L 2184, H01L 21265

Patent

active

057121737

ABSTRACT:
A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.

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patent: 4683637 (1987-08-01), Varker et al.
patent: 4700454 (1987-10-01), Baerg et al.
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patent: 5346841 (1994-09-01), Yajima
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patent: 5439841 (1995-08-01), Alter
patent: 5567629 (1996-10-01), Kubo
IBM Technical Disclosure Bulletin, "Quasi-Semiconductor-on-Insulator CMOS Structure," vol. 31, No. 8, Jan. 1989, pp. 114-114.

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