Method of making semiconductor device with metal silicide nitrid

Details Method of making semiconductor device with metal silicide nitrid Method of making semiconductor device with metal silicide nitrid

1995-01-10

1997-06-17

Niebling, John

Fishing, trapping, and vermin destroying

437190, 437192, 437200, H01L 218234

Patent

active

056396783

ABSTRACT:
A MOSFET in accordance with this invention includes: a metal silicide layer formed on a impurity region and on the upper surface of a gate electrode; a metal silicide nitride layer formed on the metal silicide layer; and a metal nitride layer formed on the metal silicide nitride layer. The process for formation of a conductive layer includes the steps of: (a) forming an impurity region in a semiconductor substrate; (b) forming a metal layer on the impurity region; (c) carrying out a heat treatment under an inert gas atmosphere to form a metal silicide of metastable phase; and (d) carrying out a heat treatment under an nitrogen gas atmosphere so as for the metal silicide of the metastable phase to be phase-transited to a stable phase.

REFERENCES:
patent: 4545116 (1985-10-01), Lau
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patent: 5434044 (1995-07-01), Nulman et al.
N.I. Lee et al.; "Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in the Ti-Polycide Gate". Extended Abstracts of the 1993 Internation Conference on Solid State Devices and Materials, Makuhari, 1993; pp. 832-834, month unknown.
"Intermetallic Compound Formation/Kinetics"; p. 100-105, date unknown, author unknown.

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