Method of making semiconductor device with film resistor

Details Method of making semiconductor device with film resistor Method of making semiconductor device with film resistor

1989-04-03

1991-07-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 47, 437 51, 437 52, 437193, 437200, 437228, 437235, 437918, 357 51, H01L 2170

Patent

active

050305883

ABSTRACT:
A method of making a semiconductor device having a film resistive element. A resistive film is deposited over a substrate formed with a first contact hole open to an under-layer electrode region disposed in or on the substrate. The resistive layer is selectively etched to form the film resistive element and at the same time to leave portion of the resistive film disposed in and around the first contact hole. An inter-layer insulating film is then formed over the substrate. The inter-layer insulating film is selectively etched to form a second contact hole open to the film resistive element and at the same time to remove at least portion of the inter-layer insulating film disposed in and around the first contact hole. An over-layer electrode pattern film is formed in contact with the resistive film left in the first and second contact holes.

REFERENCES:
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patent: 4391846 (1983-05-01), Raymond
patent: 4413403 (1983-11-01), Ariizumi
patent: 4416049 (1983-11-01), McElroy
patent: 4484388 (1984-11-01), Iwasaki
patent: 4497106 (1985-05-01), Momma et al.
patent: 4601889 (1971-08-01), Kaneoya
patent: 4693925 (1987-09-01), Cheung et al.
patent: 4786612 (1988-11-01), Yau et al.
Roger Allan, "Thin Film Devices on Silicon Chip Withstand Up to 500.degree. C.", Electronics, Jan. 3, 1980, pp. 36-40.

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