Method of making semiconductor device with different oxide film

Details Method of making semiconductor device with different oxide film Method of making semiconductor device with different oxide film

1989-04-13

1990-11-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 69, H01L 21336

Patent

active

049719238

ABSTRACT:
A method of concurrently forming thick and thin field silicon oxide films for use as element separation on the silicon substrate. An under-layer silicon oxide film is formed over the silicon substrate. A silicon nitride film is chemically-vapor-deposited over the under-layer silicon oxide film. The silicon nitride film is selectively etched to expose the under-layer silicon oxide film to thereby form openings. The silicon substrate is annealed within a heated atmosphere of ammonia gas to convert a surface portion of the exposed under-layer silicon oxide film into a thermally nitrified silicon oxide film within the openings. The thermally nitrified silicon oxide film is selectively removed from some of the openings and maintained in the other openings. The silicon substrate is thermally oxidized through the openings to concurrently form relatively thick field oxide film within said some of the openings and relatively thin field oxide film within the other openings.

REFERENCES:
patent: 3886000 (1975-05-01), Bratter et al.
patent: 4352236 (1982-10-01), McCollum
patent: 4624046 (1986-11-01), Shideler et al.
Ghandhi, VLSI Fabrication Principles John Wiley & Sons, Inc., New York, NY (1983), p. 385.
IBM Technical Disclosure Bulletin, vol. 24, No. 7B, Dec. 1981, pp. 3584-3585, "Simultaneous Growth of Thick and Thin Oxide via Silicon Nitride Conversion", C. T. Kroll.
IBM Technical Disclosure Bulletin, vol. 29, No. 12, May 1987, pp. 5432-5433, "Nitride SiO.sub.2 Film as a New Oxidation Mask Material".

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