Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2000-08-21
2002-12-31
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S238000, C438S381000, C438S382000, C438S393000
Reexamination Certificate
active
06500724
ABSTRACT:
The present invention is directed to a semiconductor device and method for forming a semiconductor device, and particularly, a semiconductor device, including at least one passive element, adapted for use in wireless communication systems.
Many electronic devices currently suffer design and resulting performance limitations in view of the state of semiconductor device fabrication technology. Wireless communication systems, for example, generally contain relatively few semiconductor chips, but several hundred passive elements. As efforts continue to enhance form factor and power reduction, and to improve performance and functionality at frequencies on the order of 10
9
Hz or higher, it has become desirable to integrate passive elements into separate chips or modules and onto active substrates (such as silicon-containing substrates).
A variety of on-chip capacitor and resistor technologies currently exist, examples of which include double-poly, gate-oxide or junction capacitors or diffused silicon or poly silicon resistors. Many applications would benefit from an improvement in performance characteristics resulting from these technologies. For example, improvement is sought in the areas of reducing parasitic capacitance, improving voltage linearity, reducing electrode series resistance or reducing 1/f noise. It is also desired that resulting devices be integrated into the backend of an active substrate (e.g., Si-chip), heretofore not accomplished using existing technology.
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Zurcher, Peter et al.; “Integration Of Thin Film MIM Capacitors And Resistors Into Copper Metallization Based RF-CMOs And BI-CMOs Technologies;” International Electron Devices Meeting 2000; IEDM; Technical Digest; San Francisco, CA; Dec. 10-13, 2000; New York, NY: IEEE, US, 10 Dec. 10, 2000, pp. 153-156.
Miller, III Melvy Freeland
Zurcher Peter
Lytle Craig P.
Motorola Inc.
Smith Matthew
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