Method of making semiconductor device having a short gate length

Details Method of making semiconductor device having a short gate length Method of making semiconductor device having a short gate length

1994-01-07

1995-09-12

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437154, 437184, 437912, H01L 218252

Patent

active

054496284

ABSTRACT:
A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device having a short gate length is fabricated.

REFERENCES:
patent: 4992387 (1991-02-01), Tamura

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