Method of making semiconductor device having a plurality of impu

Details Method of making semiconductor device having a plurality of impu Method of making semiconductor device having a plurality of impu

1996-06-03

1997-11-18

Tsai, Jey

Fishing, trapping, and vermin destroying

437 34, 437 35, 437 45, 437 56, 437 69, H01L 21265

Patent

active

056887019

ABSTRACT:
A semiconductor device in which ability for isolating elements from each other can be improved and increase in substrate constant and junction capacitance can be suppressed, is disclosed. An impurity layer for improving the ability for isolating elements is positioned only immediately below an isolating insulating film. An impurity layer for adjusting substrate constant and junction capacitance is formed through independent steps from the impurity layer for improving the isolating ability.

REFERENCES:
patent: 4710477 (1987-12-01), Chen
patent: 4717683 (1988-01-01), Parrillo et al.
patent: 4784968 (1988-11-01), Komori et al.
patent: 5141882 (1992-08-01), Komori et al.
patent: 5142882 (1992-09-01), Komori et al.
patent: 5344787 (1994-09-01), Nagalingam
patent: 5432107 (1995-07-01), Uno et al.
patent: 5518943 (1996-05-01), Tsunoda
patent: 5543647 (1996-08-01), Kobayashi et al.
patent: 5554883 (1996-09-01), Kuroi
"A 0.5UM Isolation Technology Using Advanced Poly Silicon Pad Locos (Appl)", Toshiyuki Nishihara et al., IEDM 1988, pp. 100-103.

Affiliated with

Also associated with

Rating

Method of making semiconductor device having a plurality of impu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor device having a plurality of impu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor device having a plurality of impu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1564991