Method of making semiconductor device employing self diffusion o

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437187, 148DIG26, H01L 21265

Patent

active

052216349

ABSTRACT:
The invention relates to such semiconductor devices comprising: a wiring layer with a predetermined pattern formed over a major surface of a semiconductor substrate through an insulating film, a diffusion layer formed under a contact hole formed in said insulating film in an adjacent region of the wiring layer, and a conductive layer deposited into said contact hole in a state of being connected to said wiring layer.

REFERENCES:
patent: 4069067 (1978-01-01), Ichinohe
patent: 4305760 (1981-12-01), Trudel
patent: 4322736 (1982-03-01), Sasaki et al.
patent: 4453306 (1984-06-01), Lynch et al.
patent: 4619037 (1986-10-01), Taguchi et al.
patent: 4866009 (1989-09-01), Matsuda
patent: 4912540 (1990-03-01), Sander et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making semiconductor device employing self diffusion o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor device employing self diffusion o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor device employing self diffusion o will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1440752

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.