Method of making semiconductor device contact including transiti

Details Method of making semiconductor device contact including transiti Method of making semiconductor device contact including transiti

1990-10-31

1992-02-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437160, 437192, 148DIG34, 148DIG35, 357 67, H01L 21225, H01L 21283

Patent

active

050860160

ABSTRACT:
A contact is provided in a self-aligned manner to a doped region a semiconductor substrate by first forming a layer of a transition metal-boride compound over a selected region on the substrate. A layer of a transition metal-nitride compound is formed over the layer of transition metal-boride compound, and the structure is heated to drive dopant from the layer of transition metal-boride compound into the substrate. The transition metal-boride/transition metal nitride layers are patterned to leave a contact to the doped region.

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IBM Technical Disclosure Bulletin, vol. 30, No. 5, Oct. 1987, "Method for Forming Shallow P+ Diffusions", by S. Roberts et al., p. 404.

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