Method of making semiconductor device comprising a capacitor and

Details Method of making semiconductor device comprising a capacitor and Method of making semiconductor device comprising a capacitor and

1989-11-13

1991-03-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437 60, 437240, 437919, 148DIG14, H01L 21316

Patent

active

049977946

ABSTRACT:
A semiconductor device comprising a buried phosphor glass layer (5) consisting of a subjacent thick electrically insulating layer (4), a phosphor glass layer (6) and an overlying thin covering layer (7). According to the invention, the thicker electrically insulating layer (4) is locally removed and the combination of phosphor glass layer 6 and covering layer 7 is used as a dielectric for a capacitor. The invention also relates to a method of manufacturing a capacitor with indicated dielectric.

REFERENCES:
patent: 3615942 (1971-10-01), Blumenfeld
patent: 4571816 (1986-02-01), Dingwall
patent: 4621277 (1986-11-01), Ito et al.
Arzubi et al., "Metal-Oxide Semiconductor Capacitor", IBM Tech. Discl. Bull., vol. 17, No. 6, Nov. 1974, pp. 1569-1570.

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