Method of making semiconductor device by selective epitaxial gro

Details Method of making semiconductor device by selective epitaxial gro Method of making semiconductor device by selective epitaxial gro

1993-12-07

1995-08-01

Fourson, George

Fishing, trapping, and vermin destroying

437133, 257623, 257626, H01L 2120

Patent

active

054380189

ABSTRACT:
A selective growth mask having a plurality of openings is formed on a semiconductor substrate. Desired epitaxially grown regions are formed on the openings by controlling the upward epitaxial growth from the openings. Two resonance tunnel barrier diodes are formed on respective separated two epitaxially grown regions and connected together. Thereafter, a tunnel barrier diode is formed on the connected two resonance tunnel barrier diodes to form a composite element having an SRAM function. A number of composite functional elements can be integrally formed on a semiconductor substrate by selective growth and a small number of fine processes.

REFERENCES:
patent: 4774205 (1988-09-01), Choi et al.
patent: 4837175 (1989-06-01), Calviello
patent: 5045494 (1991-09-01), Choi et al.
patent: 5270245 (1993-12-01), Gaw et al.
L. Jastrzebski, "SOI by CVD: Epitaxial Lateral Overgrowth (ELO) Process" Jour. of Crystal Growth, vol. 63, 1983, pp. 493-494.

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