Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Having light transmissive window
Patent
1999-01-15
2000-08-01
Bowers, Charles
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Having light transmissive window
438975, H01L 2144, H01L 2148, H01L 2150
Patent
active
060965770
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a method of making a CSP (chip scale/size package) type semiconductor device and also concerns a film carrier tape,
BACKGROUND ART
Following the high density mounting of semiconductor devices, it has been found that bare chips are ideal. However, it is difficult to assure the quality of bare chips and to handle the bare chips. Thus, CSP (chip scale/size package) has been developed. Although CSP is not formally defined now, it is generally understood as the IC package of which package size is equal to or slightly larger than those of the IC chips. The development of the CSP technology is important to advance the high density mounting. An example of the prior arts relating to the CSP is described in International Patent Publication WO 95/08856. This publication describes a method in which a lead frame is layered on a lead frame support (exclusive jig). A special tool is then used to cut individual leads with the cut lead parts being downwardly bent and connected to the bonding pad of the corresponding IC chip. Such a method requires any special jig or equipment and also raises a problem in that the yield is poor since the lead tends to be undesirably bent wren the lead parts are to be bonded to the IC chip while cutting the lead.
To overcome such a problem, it has been proposed that a wiring pattern is formed on an insulating film and located opposing to the active face of a semiconductor chip, with part of the wiring pattern being directly bonded to the electrodes of the semiconductor chip. This can overcome the above-mentioned problem as such, but cannot properly perform the positioning procedure while viewing from above, since the wiring pattern is located opposing to the electrodes. To provide the proper positioning of the wiring pattern, there is required a flip chip bonding device which can observe the wiring pattern and electrodes located opposing to one another through an optical system. This will further raise a new problem in that the general-purpose gang bonding type bonder cannot be used.
The present invention was made in view of the fact that the positional recognition could not be attained only by the unidirectional recognition means according to the conventional art since the present invention was of a structure (which did not have any device hole) different from that of the conventional substrates. Therefore, an object of the present invention is to provide a method of making a semiconductor device which can properly be positioned while viewing through recognition means from a single direction (or from the side of an insulating film). In other words, the proper positioning can be accomplished by using the unidirectional recognition means of the conventional art without need of any complicated structure on the side of the making system. The present invention also provides a film carrier tape usable in such a method.
DISCLOSURE OF THE INVENTION
The present invention provides a method of making a semiconductor device, comprising: imitation pattern and a light transmission portion, the imitation pattern having an imitation junction identical to a junction of a wiring pattern to an electrode of a semiconductor chip, the wiring pattern formed on an insulating film, the imitation pattern having a shape identical to a shape of the wiring pattern, the light transmission portion formed in an area corresponding to the imitation junction; the imitation junction and the electrode face in a direction of opposing each other; observed through the light transmission portion; a same position as occupied by the imitation film; and
According to the present invention, the positioning between the electrodes of the semiconductor chip and the imitation junctions of the imitation patterns is first performed using the imitation film. Since the imitation film is formed with the light transmission portions at positions corresponding to the imitation junctions, the imitation junctions can easily be positioned with the respective electrodes while being observed throu
REFERENCES:
patent: 4832255 (1989-05-01), Bickford
Berezny Nema
Bowers Charles
Seiko Epson Corporation
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