Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

1979-06-12

1981-01-27

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

29571, 29578, 204 56R, C25D 1102, C25D 1132

Patent

active

042473730

ABSTRACT:
An epitaxial layer having a specified conductivity type formed on a semiinsulative or high resistivity semiconductor substrate or insulative substrate is anodized (anodically oxidized) by a predetermined D.C. current under an illumination of light of a predetermined intensity, thereby a depletion layer is formed beneath an oxide layer, which is formed by the anodizing, and the anodizing ceases in areas where the bottom face of the depletion layer reaches the semiinsulative or high resistivity semiconductor substrate or insulative substrate thus retaining a layer of highly uniform thickness layer of the epitaxial grown layer on the substrate.

REFERENCES:
patent: 3345274 (1967-10-01), Schmidt
patent: 3345275 (1967-10-01), Schmidt
patent: 3377258 (1968-04-01), Schmidt
patent: 3404073 (1968-10-01), Scott, Jr.
patent: 3457148 (1969-07-01), Waggener
patent: 4080721 (1978-03-01), Hung
patent: 4108738 (1978-08-01), Cho
patent: 4157610 (1979-06-01), Kamei

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