Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

2008-06-13

2011-10-04

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C438S508000

Reexamination Certificate

active

08030216

ABSTRACT:
A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

REFERENCES:
patent: 2002/0011463 (2002-01-01), Buskirk et al.
patent: 2004/0007561 (2004-01-01), Nallan et al.
patent: 2007/0077767 (2007-04-01), Jin et al.
patent: 2005-39015 (2005-02-01), None

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