Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

2008-07-29

2008-07-29

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S706000, C438S508000, C438S508000

Reexamination Certificate

active

11299690

ABSTRACT:
A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

REFERENCES:
patent: 2004/0007561 (2004-01-01), Nallan et al.
patent: 2007/0077767 (2007-04-01), Jin et al.
patent: 2005-39015 (2005-02-01), None

Affiliated with

Also associated with

Rating

Method of making semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3930582