Method of making semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S710000, C438S706000, C438S508000, C438S508000

Reexamination Certificate

active

11299690

ABSTRACT:
A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

REFERENCES:
patent: 2004/0007561 (2004-01-01), Nallan et al.
patent: 2007/0077767 (2007-04-01), Jin et al.
patent: 2005-39015 (2005-02-01), None

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