Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

2002-05-24

2004-11-09

Zarneke, David A. (Department: 2827)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

C438S612000, C438S617000

Reexamination Certificate

active

06815260

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to semiconductor devices and, particularly, to a semiconductor device package and a method of making the same.
This application is a counterpart of Japanese application Serial Number 2000-347855, filed on Nov. 15, 2000, the subject matter of which is incorporated herein by reference.
2. Description of the Related Art
FIG. 10
shows a conventional ball grid array (BGA) type semiconductor device. The BGA type semiconductor device comprises an insulative board
51
and a plurality of metal bumps or solder balls
52
arranged on the lower face of the insulative board
51
as outer electrodes so that it makes miniaturization possible and stronger and easier to handle than the pin type package. Also, it comprises a plurality of conductive members or metal foils
53
and conductive members
54
and
55
. A solder resist
56
is provided on the lower face of the insulative board
51
. A semiconductor element
58
is bonded to the upper face of the insulative board
51
with a bonding agent
57
. The electrodes
59
of the semiconductor element
59
are connected to the conductive members
53
by metal wires
60
, which are covered by an insulative resin
61
.
However, the BGA type semiconductor device has the solder resist
56
to coat the lower face of the insulative board
51
so that if the solder resist
56
has low adhesive powers, it could separate to lower the reliability of the semiconductor device. Since the insulative board
51
already has the conductive members
53
,
54
, and
55
, the solder resist
56
, and the metal bumps
52
, the manufacturing cost is high.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the invention to provide a simple, inexpensive, and reliable semiconductor device having advantages of the BGA type semiconductor device, such as miniaturization, strength, and easiness to handle.
According to one aspect of the invention there is provided a method of making a semiconductor device which comprises the steps of coating a first face of an insulative board with a thermally plastic resin; bonding a semiconductor element onto the thermally plastic resin; piercing the thermally plastic resin and the insulative board with at least one capillary that holds a metal wire, forming a metal ball at a front end of the metal wire on a side of a second face of the insulative board that is opposite to the first face of the insulative board and pulling out the capillary from the insulative board and the thermally plastic resin such that the metal ball is embedded in the insulative board; pressing the capillary onto an electrode of the semiconductor element to bond the metal wire to the electrode and cutting off an extra wire; and attaching at least one metal bump to the second face of the insulative board so as to be connected to the metal ball.
According to another aspect of the invention there is provided a method of making a semiconductor device, comprising the steps of applying a coat of thermally plastic resin to a first face of an insulative board that is curable with ultraviolet rays; bonding a semiconductor element onto the thermally plastic resin; piercing the thermally plastic resin and the insulative board with at least one capillary that holds a metal wire, forming a metal ball at a front end of the metal wire on a side of a second face of the insulative board that is opposite to the first face of the insulative board and pulling out the capillary from the insulative board and the thermally plastic resin such that the metal ball is embedded in the insulative board; pressing the capillary onto an electrode of the semiconductor element to bond the metal wire to the electrode and cutting off an extra wire; irradiating the insulative board with the ultraviolet rays; and attaching at least one metal bump to the second face of the insulative board so as to be connected to the metal ball.
According to still another aspect of the invention there is provided a method of making a semiconductor device, comprising the steps of coating a first face of an insulative board of nonwoven cotton fabric with a thermally plastic resin; bonding a semiconductor element onto the thermally plastic resin; piercing the thermally plastic resin and the insulative board with at least one capillary that holds a metal wire, forming a metal ball at a front end of the metal wire on a side of a second face of the insulative board that is opposite to the first face of the insulative board and pulling out the capillary from the insulative board and the thermally plastic resin such that the metal ball is embedded in the insulative board; pressing the capillary onto an electrode of the semiconductor element to bond the metal wire to the electrode and cutting off an extra wire; and attaching at least one metal bump to the second face of the insulative board so as to be connected to the metal ball.
According to yet another embodiment of the invention, the capillary piercing step is performed while the thermally plastic resin is heated on a heat stage.
According to another embodiment of the invention, the metal ball of the metal wire is formed by a spark produced between the metal wire and an electric torch.


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