Method of making semiconductor components with electrochemical r

Details Method of making semiconductor components with electrochemical r Method of making semiconductor components with electrochemical r

1994-06-06

1997-01-14

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437132, 437133, 437170, 437974, H01L 2120, H01L 2114, H01L 21306, H01L 21465

Patent

active

055939171

ABSTRACT:
The method is characterized by the steps consisting in: a) producing a semi-insulating or n-type substrate; b) forming a separating layer of a p.sup.+ -type doped material on the surface of said substrate; c) forming an active layer on said separating layer, the active layer including at least a bottom layer with n-type doping; d) making a set of semiconductor components by etching and metalizing said active layer; g) fixing a common support plate on the assembly made in this way, thereby holding the components together mechanically; and h) dissolving the material of the separating layer anodically and without illumination while leaving the other materials intact, thereby separating the substrate from said components without dissolving the substrate.

REFERENCES:
patent: 3508980 (1970-04-01), Jackson et al.
patent: 3655540 (1972-04-01), Irvin
patent: 4321613 (1982-03-01), Hughes et al.
patent: 4369099 (1983-01-01), Kohl et al.
patent: 4700467 (1987-10-01), Donzelli
patent: 4818724 (1989-04-01), Cetronio et al.
patent: 5202018 (1993-04-01), Horanyl et al.
M. Konagai et al., "High efficiency GaAs thin film solar cells by peeled film technology", Journal of Crystal Growth, vol. 45, 1978, pp. 277-280.
E. Yablonovitch et al., "Extreme selectivity in the lift-off of epitaxial GaAs films", Applied Physics Letters, vol. 51, No. 26, Dec. 28, 1987, pp. 2222-2224.

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