Method of making semiconductor components, in particular on GaAs

Details Method of making semiconductor components, in particular on GaAs Method of making semiconductor components, in particular on GaAs

1996-03-01

1998-10-27

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

438464, 438 67, H01L 2120

Patent

active

058277510

ABSTRACT:
The method is characterized by steps consisting in: a) producing a substrate of GaAs or of InP, b) growing epitaxially on said substrate a separating layer of AlGaAs or of AlInAs that is aluminum-rich, c) growing epitaxially on said separating layer an active layer including aluminum-rich material, d) making a set of components by etching and metallization, e) applying a protective layer of a passivation material or of a photosensitive resin, f) selectively etching said protective layer so as to bare the separating layer between the components, g) fixing a common support plate on the assembly so as to hold the components together mechanically, and h) dissolving the material of the separating layer by the chemical action of a solvent on the bared regions, while leaving intact the other materials so as to separate the substrate from the components without dissolving the substrate.

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patent: 5458694 (1995-10-01), Nuyen
patent: 5593917 (1997-01-01), Nuyen
M. Konagai et al., "High efficiency GaAs thin film solar cells by peeled film technology", Journal of Crystal Growth, vol. 45, 1978, pp. 277-280.
T. Hamaguchi et al., "Device Layer Transfer Technique Using Chemical-Mechanical Polishing", Japanese Journal of applied Physics, vol. 23, No. 10/2, Oct. 1984, pp 815-817.

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