Method of making semiconductor chip having field effect transist

Details Method of making semiconductor chip having field effect transist Method of making semiconductor chip having field effect transist

1989-04-27

1990-06-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 51, 437 56, H01L 21336

Patent

active

049370758

ABSTRACT:
A chip having field effect transistors which have differing threshold voltages determined in a single masking step and a method of making the chip provides a chip usable at both cryogenic and room temperatures without a costly additionaly masking step. The chip has devices with low threshold voltages that are therefore optimized for performance at low temperatures, and devices with high threshold voltages that are optimized for performance at higher temperatures. Such high threshold voltage devices are also usable, though sub-optimally, at lower temeperatures such as cryogenic temperatures. The two sets of devices have their threshold voltages determined in a single masking step, with the higher threshold voltage values being provided during this step by reducing the width of a device to produce a parasitic effect.

REFERENCES:
patent: 3867196 (1975-02-01), Richman
patent: 4166223 (1979-08-01), Bluzer
patent: 4845390 (1984-11-01), Jones et al.

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