Method of making semiconductor apparatus

Details Method of making semiconductor apparatus Method of making semiconductor apparatus

1994-06-06

1997-06-03

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

438410, 438481, 438355, H01L 2176, H01L 2120

Patent

active

056354118

ABSTRACT:
One NPN or PNP transistor is formed on a Si single crystal island having a crystal orientation which is the same as that of a Si substrate and formed into an island shape through an insulation and separation layer on the Si substrate so as to form a semiconductor apparatus which has no parasitic junctions.

REFERENCES:
patent: 4433471 (1984-02-01), Ko et al.
patent: 4512075 (1985-04-01), Vora
patent: 4604162 (1986-08-01), Sobczak
patent: 4637127 (1987-01-01), Kurogi et al.
patent: 4749441 (1988-06-01), Christianson et al.
patent: 4760036 (1988-07-01), Schubert
patent: 4814287 (1989-03-01), Takemoto et al.
patent: 4845048 (1989-07-01), Tamaki et al.
patent: 4879255 (1989-11-01), Deguchi et al.
patent: 4925805 (1990-05-01), van Ommen
patent: 5106775 (1992-04-01), Kaga et al.
patent: 5124276 (1992-06-01), Samata et al.
patent: 5212397 (1993-05-01), See et al.
patent: 5252143 (1993-10-01), Chiang et al.
patent: 5266517 (1993-11-01), Smayling et al.
patent: 5296086 (1994-03-01), Takasu
patent: 5308445 (1994-05-01), Takasu
patent: 5336633 (1994-08-01), Tsuruta
patent: 5417180 (1995-05-01), Nakamura

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