Method of making semiconducting ferroelectric PTCR devices

Details Method of making semiconducting ferroelectric PTCR devices Method of making semiconducting ferroelectric PTCR devices

1993-01-28

1994-05-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437248, H01L 21441

Patent

active

053169735

ABSTRACT:
A method of making a positive temperature coefficient of resistance (PTCR) device, and the PTCR device itself, where there is provided a ferroelectric semiconductor having a Curie point and a bulk resistance. A layer of electrically conducting material is provided upon the ferroelectric semiconductor. The layer is heated at a process temperature greater than the Curie point of the ferroelectric semiconductor for a period of time, and cooled to ambient temperature. The process temperature and time period are selected to be sufficent to provide an ambient layer resistance greater than the bulk resistance of the ferroelectric semiconductor. The layer may be heated in an oxidizing atmosphere or in a reducing atmosphere, which also affects the layer resistance. The ferroelectric semiconductor may be in the form of an oxide ceramic or liquid crystals, and may include barium titanate. The layer may be selected from the group consisting of metal, metal alloys, metal oxides, polymers, and composites thereof.

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