Method of making self-aligned remote polysilicon contacts

Details Method of making self-aligned remote polysilicon contacts Method of making self-aligned remote polysilicon contacts

1995-06-07

1997-10-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437 44, 437193, 437200, 437228PL, H01L 21335

Patent

active

056747748

ABSTRACT:
Remote electrical contacts for a semiconductor are produced by depositing a polysilicon layer over the entire surface of a semiconductor device and removing a portion of the polysilicon layer by chemi-mechanical polishing. The resulting structure is thereby provided with electrically isolated areas of polysilicon which constitute remote electrical contacts for the semiconductor device. The polysilicon layer or the isolated areas of polysilicon can be salicided to provide very low resistivity. Either the polysilicon layer or the salicide layer can be subjected to ion implantation to provide LDD regions.

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patent: 5079180 (1992-01-01), Rodder et al.
patent: 5182619 (1993-01-01), Pfiester
Wolf, et al., Silicon Processing, vol. 1, 1986, Lattice Press, pp. 386-400.

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