Method of making self-aligned metal gate field effect transistor

Details Method of making self-aligned metal gate field effect transistor Method of making self-aligned metal gate field effect transistor

1982-06-25

1985-08-13

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148187, H01L 21302

Patent

active

045341036

ABSTRACT:
A metal gate field effect transistor has its source and drain located on one major surface of a gallium arsenide layer, while its gate electrode forms a Schottky barrier contact to an opposed major surface of the layer in a self-aligned relationship to the source and drain.

REFERENCES:
patent: 3258663 (1966-06-01), Weimer
patent: 3287611 (1966-11-01), Bockemuehl et al.
patent: 3385731 (1968-05-01), Weimer
patent: 3930912 (1976-01-01), Wisbey
patent: 4160984 (1979-07-01), Ladd et al.
patent: 4226649 (1980-10-01), Davey et al.
patent: 4247373 (1981-01-01), Shimano et al.
patent: 4266333 (1981-05-01), Reichert
patent: 4317125 (1982-02-01), Hughes et al.

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