Method of making self-aligned guard regions for semiconductor de

Details Method of making self-aligned guard regions for semiconductor de Method of making self-aligned guard regions for semiconductor de

1981-10-28

1984-04-10

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29578, 29591, 148187, 357 15, 357 91, H01L 2128, H01L 21265

Patent

active

044419317

ABSTRACT:
A method for forming a guard zone (21) is disclosed, suitable for a guard ring for a Schottky barrier diode or for a channel guard zone for protecting the channel inversion layer of an insulated gate field effect transistor. The method uses anisotropic (straight-line) etching of a window in a thermally grown silicon dioxide layer (2) on a silicon body (1) combined with deposition of a metallic masking layer (4, 14), such as aluminum, which is subject to a shadow effect of reduced thickness at a sidewall (25) of the window. Slight etching of the metallic masking layer results in an aperture at the resulting edges of the masking layer located in the vicinity of the sidewall of the thermally grown oxide layer. Ions are then implanted with the body through the aperture, to form the guard zone (21).

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patent: 4261095 (1981-04-01), Dreves et al.
patent: 4282539 (1981-08-01), Schrader
patent: 4337115 (1982-06-01), Ikeda et al.
Ning et al., IBM-TDB, 22 (1980), 4768.
Sato et al., J. Vac. Sci. Technol. 19, (1981), 1329.

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