Method of making self-aligned GaAs devices having TiWN.sub.x gat

Details Method of making self-aligned GaAs devices having TiWN.sub.x gat Method of making self-aligned GaAs devices having TiWN.sub.x gat

1987-01-12

1988-11-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 39, 437176, 437171, 437192, 437201, 437245, 437912, 437944, 148DIG105, 357 15, H01L 21283

Patent

active

047820322

ABSTRACT:
A method of making a field-effect transistor includes performing a first ion implant in at least one region of a gallium arsenide substrate and forming a metallization layer of titanium-tungsten nitride on the implanted substrate. A metallic gold masking layer is deposited on the metallization layer over the implanted region and that portion of the metallization layer which is unmasked is removed. A self-aligned source of implantation ions is beamed into the first implanted region in those areas not covered by the masking layer. The substrate is then annealed to activate the implanted region with the gold masking layer remaining to greatly reduce the resistance of the gate electrode of said field-effect transistor.

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