Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-11-28
1987-02-17
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148 15, 148187, 148DIG84, 148DIG140, 357 232, 357 91, H01L 21263, H01L 21324
Patent
active
046428798
ABSTRACT:
High transconductance is obtained in GaAs FET's by forming a channel layer having a carrier concentration monotonously decreasing from the interface of the channel layer and a control gate toward the interface of the channel layer and the substrate it is formed in. This is established by ion implantation of the channel layer through an insulating layer, preferably an AlN layer, on a GaAs substrate. An AlN layer is preferable since it has no adverse effects on the GaAs substrate during ion implantation and the following heat treatment, allowing higher uniformity of the threshold voltages of the FET's.
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Kawata Haruo
Nishi Hidetoshi
Fujitsu Limited
Roy Upendra
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