Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1996-10-25
1998-07-21
Chaudhari, Chandra
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438104, H01L 2100
Patent
active
057834601
ABSTRACT:
A method for forming a dual stripe magnetoresistive (DSMR) sensor element. The method employs a lift off stencil an etch mask for sequentially anisotropically etching a blanket second magnetoresistive (MR) layer, a blanket inter stripe dielectric layer and a blanket first magnetoresistive (MR) layer to form a patterned second magnetoresistive (MR) layer, a patterned inter stripe dielectric layer and a patterned first magnetoresistive (MR) layer with fully aligned edges. The lift off stencil is then employed as a lift off mask in forming a patterned dielectric layer covering the fully aligned edges. In a second embodiment a window within a lift off stencil is employed as an etch mask in forming aligned edges of a trimmed patterned first magnetoresistive (MR) layer and a trimmed patterned second magnetoresistive (MR) layer within the composite track width of a patterned first magnetoresistive (MR) layer and a patterned second magnetoresistive (MR) layer which are offset.
REFERENCES:
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5573809 (1996-11-01), Nix et al.
patent: 5646051 (1997-07-01), Solin
Chen Mao-Min
Han Cherng-Chyi
Ackeri Stephen B.
Chaudhari Chandra
Headway Technologies Inc.
Saile George O.
Szecsy Alek P.
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