Method of making self-aligned differently doped regions by contr

Details Method of making self-aligned differently doped regions by contr Method of making self-aligned differently doped regions by contr

1980-06-20

1982-01-19

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 156644, 156660, 427 431, H01L 2126, B05D 304, B05D 312

Patent

active

043115330

ABSTRACT:
A method for the self alignment of differently doped regions in a silicon substrate. According to this method one uses the controlled thermal flow of a resin for defining successive stepped doping zones. This applies for example to the formation of emitters and bases for transistors of an integrated circuit.

REFERENCES:
patent: 3920483 (1975-11-01), Johnson, Jr. et al.
patent: 3951694 (1976-04-01), Manfret
patent: 3976524 (1976-08-01), Feng
patent: 4022932 (1977-05-01), Feng
patent: 4084987 (1978-04-01), Godber
patent: 4201800 (1980-05-01), Alcorn et al.
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4253888 (1981-03-01), Kikuchi
IBM-Tech. Disclosure Bulletin, 14 (1972), p. 2607.
Abbas et al., IBM-TDB, 20 (1977), 1376.

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